Manufacturer |
ON Semiconductor |
FET Type |
N-Channel |
Technology |
MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) |
60V |
Current - Continuous Drain (Id) @ 25°C |
115mA (Ta) |
Drive Voltage (Max Rds On, Min Rds On) |
5V, 10V |
Rds On (Max) @ Id, Vgs |
7.5 Ohm @ 500mA, 10V |
Vgs(th) (Max) @ Id |
2.5V @ 250µA |
Vgs (Max) |
±20V |
Input Capacitance (Ciss) (Max) @ Vds |
50pF @ 25V |
FET Feature |
- |
Power Dissipation (Max) |
200mW (Ta) |
Operating Temperature |
-55°C ~ 150°C (TJ) |
Mounting Type |
Surface Mount |
Supplier Device Package |
SOT-23 (TO-236AB) |
Package / Case |
TO-236-3, SC-59, SOT-23-3 |