Product Category: |
Bipolar Transistors - BJT |
Manufacturer: |
Toshiba |
RoHS: |
Details |
Mounting Style: |
Through Hole |
Package / Case: |
TO-3P-3 |
Transistor Polarity: |
PNP |
Configuration: |
Single |
Collector- Emitter Voltage VCEO Max: |
230 V |
Collector- Base Voltage VCBO: |
230 V |
Emitter- Base Voltage VEBO: |
5 V |
Maximum DC Collector Current: |
15 A |
Gain Bandwidth Product fT: |
30 MHz |
Maximum Operating Temperature: |
+ 150 C |
Series: |
2SA1943 |
Brand: |
Toshiba |
DC Collector/Base Gain hfe Min: |
80 |
Height: |
26 mm |
Length: |
20.5 mm (Max) |
Minimum Operating Temperature: |
- 55 C |
Pd - Power Dissipation: |
150000 mW |
Width: |
5.2 mm (Max) |
Unit Weight: |
6.756 g |