Type |
Description |
Categories |
Discrete Semiconductor Products |
Transistors - FETs, MOSFETs - Single |
|
Manufacturer |
Infineon Technologies |
FET Type |
P-Channel |
Technology |
MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) |
20V |
Current - Continuous Drain (Id) @ 25°C |
3.7A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) |
2.5V, 4.5V |
Rds On (Max) @ Id, Vgs |
65mOhm @ 3.7A, 4.5V |
Vgs(th) (Max) @ Id |
1.2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs |
12nC @ 5V |
Vgs (Max) |
±12V |
Input Capacitance (Ciss) (Max) @ Vds |
633pF @ 10V |
FET Feature |
- |
Power Dissipation (Max) |
1.3W (Ta) |
Operating Temperature |
-55°C ~ 150°C (TJ) |
Mounting Type |
Surface Mount |
Supplier Device Package |
Micro3™/SOT-23 |
Package / Case |
TO-236-3, SC-59, SOT-23-3 |