Type |
Description |
Manufacturer |
Infineon Technologies |
FET Type |
P-Channel |
Technology |
MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) |
100V |
Current - Continuous Drain (Id) @ 25°C |
6.8A (Tc) |
Rds On (Max) @ Id, Vgs |
480mOhm @ 4A, 10V |
Vgs(th) (Max) @ Id |
4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs |
27nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds |
350pF @ 25V |
FET Feature |
- |
Mounting Type |
Through Hole |
Supplier Device Package |
TO-220AB |
Package / Case |
TO-220-3 |