|
Type |
Description |
|
Categories |
Discrete Semiconductor Products |
|
Transistors - FETs, MOSFETs - Single |
|
|
Manufacturer |
Infineon Technologies |
|
FET Type |
P-Channel |
|
Technology |
MOSFET (Metal Oxide) |
|
Drain to Source Voltage (Vdss) |
100V |
|
Current - Continuous Drain (Id) @ 25°C |
14A (Tc) |
|
Drive Voltage (Max Rds On, Min Rds On) |
10V |
|
Rds On (Max) @ Id, Vgs |
200mOhm @ 8.4A, 10V |
|
Vgs(th) (Max) @ Id |
4V @ 250µA |
|
Gate Charge (Qg) (Max) @ Vgs |
58nC @ 10V |
|
Vgs (Max) |
±20V |
|
Input Capacitance (Ciss) (Max) @ Vds |
760pF @ 25V |
|
FET Feature |
- |
|
Power Dissipation (Max) |
79W (Tc) |
|
Operating Temperature |
-55°C ~ 175°C (TJ) |
|
Mounting Type |
Through Hole |
|
Supplier Device Package |
TO-220AB |
|
Package / Case |
TO-220-3 |