Manufacturer |
Infineon Technologies |
FET Type |
N-Channel |
Technology |
MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) |
650V |
Current - Continuous Drain (Id) @ 25°C |
47A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) |
10V |
Rds On (Max) @ Id, Vgs |
70 mOhm @ 30A, 10V |
Vgs(th) (Max) @ Id |
3.9V @ 2.7mA |
Gate Charge (Qg) (Max) @ Vgs |
320nC @ 10V |
Vgs (Max) |
±20V |
Input Capacitance (Ciss) (Max) @ Vds |
6800pF @ 25V |
FET Feature |
- |
Power Dissipation (Max) |
415W (Tc) |
Operating Temperature |
-55°C ~ 150°C (TJ) |
Mounting Type |
Through Hole |
Supplier Device Package |
PG-TO247-3 |
Package / Case |
TO-247-3 |