Manufacturer |
Infineon Technologies |
Series |
HEXFET® |
Packaging |
Tube |
Part Status |
Active |
FET Type |
N-Channel |
Technology |
MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) |
55V |
Current - Continuous Drain (Id) @ 25°C |
169A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) |
10V |
Rds On (Max) @ Id, Vgs |
5.3 mOhm @ 101A, 10V |
Vgs(th) (Max) @ Id |
4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs |
260nC @ 10V |
Vgs (Max) |
±20V |
Input Capacitance (Ciss) (Max) @ Vds |
5480pF @ 25V |
FET Feature |
- |
Power Dissipation (Max) |
330W (Tc) |
Operating Temperature |
-55°C ~ 175°C (TJ) |
Mounting Type |
Through Hole |