Type |
Description |
Categories |
Discrete Semiconductor Products |
Transistors - FETs, MOSFETs - Single |
|
Manufacturer |
Nexperia USA Inc. |
FET Type |
N-Channel |
Technology |
MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) |
50V |
Current - Continuous Drain (Id) @ 25°C |
173mA (Ta) |
Drive Voltage (Max Rds On, Min Rds On) |
5V, 10V |
Rds On (Max) @ Id, Vgs |
15Ohm @ 100mA, 10V |
Vgs(th) (Max) @ Id |
1V @ 1mA |
Vgs (Max) |
±20V |
Input Capacitance (Ciss) (Max) @ Vds |
25pF @ 10V |
FET Feature |
- |
Power Dissipation (Max) |
830mW (Tc) |
Operating Temperature |
-65°C ~ 150°C (TJ) |
Mounting Type |
Surface Mount |
Supplier Device Package |
TO-236AB |
Package / Case |
TO-236-3, SC-59, SOT-23-3 |