Tính năng
- NPN Power Darlington transistors
- VCBO = -60V, VCEO = -60V, VEBO = -5V
- IC = -5A, ICM = -8A, IB = -0.12A
- PTOT = 65 W
- Storage temperature: -65oC to 150oC
- Low collector-emitter saturation voltage
- Complementary PNP - transistors
Applications
- General purpose linear and switching
Description
The devices are manufactured in planar technology with “base island” layout and monolithic Darlington configuration. The resulting
transistors show exceptional high gain performance coupled with very low saturation voltage.