Manufacturer: |
Toshiba |
Product Category: |
MOSFET |
RoHS: |
Details |
Technology: |
Si |
Mounting Style: |
Through Hole |
Package / Case: |
TO-3PN-3 |
Number of Channels: |
1 Channel |
Transistor Polarity: |
N-Channel |
Vds - Drain-Source Breakdown Voltage: |
900 V |
Id - Continuous Drain Current: |
9A |
Rds On - Drain-Source Resistance: |
1 Ohms |
Vgs - Gate-Source Voltage: |
30 V |
Qg - Gate Charge: |
60 nC |
Minimum Operating Temperature: |
- 55 C |
Maximum Operating Temperature: |
+ 150 C |
Configuration: |
Single |
Pd - Power Dissipation: |
150 W |
Height: |
20 mm |
Length: |
15.5 mm |
Transistor Type: |
1 N-Channel |
Width: |
4.5 mm |
Forward Transconductance - Min: |
7s |
Fall Time: |
20 ns |
Product Type: |
MOSFET |
Rise Time: |
25 ns |