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Product Category: |
Bipolar Transistors - BJT |
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Manufacturer: |
Toshiba |
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RoHS: |
Details |
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Mounting Style: |
Through Hole |
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Package / Case: |
TO-3P-3 |
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Transistor Polarity: |
NPN |
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Configuration: |
Single |
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Collector- Emitter Voltage VCEO Max: |
230 V |
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Collector- Base Voltage VCBO: |
230 V |
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Emitter- Base Voltage VEBO: |
5 V |
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Maximum DC Collector Current: |
15 A |
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Gain Bandwidth Product fT: |
30 MHz |
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Maximum Operating Temperature: |
+ 150 C |
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Series: |
2SC5200 |
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Brand: |
Toshiba |
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DC Collector/Base Gain hfe Min: |
80 |
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Height: |
26 mm |
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Length: |
20.5 mm (Max) |
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Minimum Operating Temperature: |
- 55 C |
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Pd - Power Dissipation: |
150000 mW |
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Width: |
5.2 mm (Max) |
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Unit Weight: |
6.756 g |