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Manufacturer: |
Toshiba |
|
Product Category: |
MOSFET |
|
RoHS: |
Details |
|
Technology: |
Si |
|
Mounting Style: |
Through Hole |
|
Package / Case: |
TO-3PN-3 |
|
Number of Channels: |
1 Channel |
|
Transistor Polarity: |
N-Channel |
|
Vds - Drain-Source Breakdown Voltage: |
900 V |
|
Id - Continuous Drain Current: |
9A |
|
Rds On - Drain-Source Resistance: |
1 Ohms |
|
Vgs - Gate-Source Voltage: |
30 V |
|
Qg - Gate Charge: |
60 nC |
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Minimum Operating Temperature: |
- 55 C |
|
Maximum Operating Temperature: |
+ 150 C |
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Configuration: |
Single |
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Pd - Power Dissipation: |
150 W |
|
Height: |
20 mm |
|
Length: |
15.5 mm |
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Transistor Type: |
1 N-Channel |
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Width: |
4.5 mm |
|
Forward Transconductance - Min: |
7s |
|
Fall Time: |
20 ns |
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Product Type: |
MOSFET |
|
Rise Time: |
25 ns |