|
Manufacturer |
Infineon Technologies |
|
Series |
HEXFET® |
|
FET Type |
N-Channel |
|
Technology |
MOSFET (Metal Oxide) |
|
Drain to Source Voltage (Vdss) |
100V |
|
Current - Continuous Drain (Id) @ 25°C |
42A (Tc) |
|
Drive Voltage (Max Rds On, Min Rds On) |
10V |
|
Vgs(th) (Max) @ Id |
4V @ 250µA |
|
Gate Charge (Qg) (Max) @ Vgs |
110nC @ 10V |
|
Vgs (Max) |
±20V |
|
Input Capacitance (Ciss) (Max) @ Vds |
1900pF @ 25V |
|
FET Feature |
- |
|
Power Dissipation (Max) |
160W (Tc) |
|
Rds On (Max) @ Id, Vgs |
36 mOhm @ 23A, 10V |
|
Operating Temperature |
-55°C ~ 175°C (TJ) |
|
Mounting Type |
Through Hole |
|
Supplier Device Package |
TO-247AC |
|
Package / Case |
TO-247-3 |