|
Type |
Description |
|
Categories |
Discrete Semiconductor Products |
|
Transistors - FETs, MOSFETs - Single |
|
|
Manufacturer |
Infineon Technologies |
|
FET Type |
N-Channel |
|
Technology |
MOSFET (Metal Oxide) |
|
Drain to Source Voltage (Vdss) |
55V |
|
Current - Continuous Drain (Id) @ 25°C |
110A (Tc) |
|
Drive Voltage (Max Rds On, Min Rds On) |
10V |
|
Rds On (Max) @ Id, Vgs |
8mOhm @ 62A, 10V |
|
Vgs(th) (Max) @ Id |
4V @ 250µA |
|
Gate Charge (Qg) (Max) @ Vgs |
146nC @ 10V |
|
Vgs (Max) |
±20V |
|
Input Capacitance (Ciss) (Max) @ Vds |
3247pF @ 25V |
|
FET Feature |
- |
|
Power Dissipation (Max) |
200W (Tc) |
|
Operating Temperature |
-55°C ~ 175°C (TJ) |
|
Mounting Type |
Through Hole |
|
Supplier Device Package |
TO-262 |
|
Package / Case |
TO-262-3 Long Leads, I²Pak, TO-262AA |