|
Type |
Description |
|
Categories |
Discrete Semiconductor Products |
|
Transistors - FETs, MOSFETs - Single |
|
|
Manufacturer |
Infineon Technologies |
|
FET Type |
N-Channel |
|
Technology |
MOSFET (Metal Oxide) |
|
Drain to Source Voltage (Vdss) |
80V |
|
Current - Continuous Drain (Id) @ 25°C |
30A (Tc) |
|
Drive Voltage (Max Rds On, Min Rds On) |
4.5V, 10V |
|
Rds On (Max) @ Id, Vgs |
28mOhm @ 23A, 10V |
|
Vgs(th) (Max) @ Id |
2.5V @ 250µA |
|
Gate Charge (Qg) (Max) @ Vgs |
33nC @ 4.5V |
|
Vgs (Max) |
±16V |
|
Input Capacitance (Ciss) (Max) @ Vds |
1890pF @ 25V |
|
FET Feature |
- |
|
Power Dissipation (Max) |
120W (Tc) |
|
Operating Temperature |
-55°C ~ 175°C (TJ) |
|
Mounting Type |
Surface Mount |
|
Supplier Device Package |
D-Pak |
|
Package / Case |
TO-252-3, DPak (2 Leads + Tab), SC-63 |